FDA24N50

Datasheet

500V 24A N-Channel Power MOSFET, 190mR RdsOn, TO-3P

Onsemi

FDA24N50

Name: FDA24N50 Onsemi
Brand: Onsemi
SKU: FDA24N50

500V 24A N-Channel Power MOSFET, 190mR RdsOn, TO-3P

N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 24A continuous drain current. Offers a low 190mΩ drain-source on-resistance and 270W maximum power dissipation. This single-element MOSFET operates with a 5V threshold voltage and includes fast switching characteristics with a 47ns turn-on delay. Packaged in TO-3P for through-hole mounting, it is RoHS compliant and operates from -55°C to 150°C.

MountingThrough Hole

PolarityN-CHANNEL

Power270W

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Technical Specifications

Onsemi FDA24N50 technical specifications.

General

Continuous Drain Current (ID)	24A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	190mR
Drain to Source Voltage (Vdss)	500V
Drain-source On Resistance-Max	190MR
Element Configuration	Single
Fall Time	86ns
Gate to Source Voltage (Vgs)	30V
Height	20.1mm
Input Capacitance	4.15nF
Lead Free	Lead Free
Length	15.8mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	270W
Mount	Through Hole
Number of Elements	1
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	270W
Radiation Hardening	No
Rds On Max	190mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	UniFET™
Threshold Voltage	5V
Turn-Off Delay Time	164ns
Turn-On Delay Time	47ns
Weight	6.401g
Width	5mm