N-Channel Power MOSFET featuring 200V drain-source breakdown voltage and a continuous drain current of 70A. This UniFET™ device offers a low 35mΩ drain-source on-resistance and a maximum power dissipation of 417W. Operating across a wide temperature range from -55°C to 150°C, it includes fast switching characteristics with turn-on delay of 71ns and fall time of 39ns. Packaged in a TO-3P (450-TUBE) for through-hole mounting, this RoHS compliant component is designed for high-power applications.
Current Rating70A
MountingThrough Hole
PolarityN-CHANNEL
Power417W
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Technical Specifications
Onsemi FDA70N20 technical specifications.
General
| Continuous Drain Current (ID) | 70A |
| Current Rating | 70A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 35MR |
| Element Configuration | Single |
| Fall Time | 39ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.1mm |
| Input Capacitance | 3.97nF |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 417W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 417W |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 71ns |
| DC Rated Voltage | 200V |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDA70N20 Datasheet
Download the complete datasheet for Onsemi FDA70N20 to view detailed technical specifications.
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