
N-Channel MOSFET featuring 280V drain-to-source breakdown voltage and 46A continuous drain current. This through-hole component offers a low 41mΩ Rds On, 215W maximum power dissipation, and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 310ns fall time and 190ns turn-off delay time, with a 6.7nF input capacitance. RoHS compliant and lead-free.
Onsemi FDAF75N28 technical specifications.
| Continuous Drain Current (ID) | 46A |
| Current Rating | 46A |
| Drain to Source Breakdown Voltage | 280V |
| Drain to Source Resistance | 41mR |
| Drain to Source Voltage (Vdss) | 280V |
| Dual Supply Voltage | 280V |
| Fall Time | 310ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 6.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 215W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 215W |
| Rds On Max | 41mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 190ns |
| DC Rated Voltage | 280V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDAF75N28 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
