
N-Channel MOSFET featuring 80V drain-source voltage and 229A continuous drain current. This single-element device offers a low 2.4mΩ Rds On resistance and 246W maximum power dissipation. Designed for surface mounting in a D2PAK package, it operates within a -55°C to 175°C temperature range. Key switching characteristics include a 47ns turn-on delay and 41ns fall time. Packaged on an 800-piece tape and reel, this RoHS compliant component is ideal for high-power applications.
Onsemi FDB024N08BL7 technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 229A |
| Drain to Source Voltage (Vdss) | 80V |
| Element Configuration | Single |
| Fall Time | 41ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.7mm |
| Input Capacitance | 13.53nF |
| Length | 10.2mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 246W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Power Dissipation | 246W |
| Radiation Hardening | No |
| Rds On Max | 2.4mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 87ns |
| Turn-On Delay Time | 47ns |
| Weight | 1.312g |
| Width | 9.4mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDB024N08BL7 to view detailed technical specifications.
No datasheet is available for this part.
