N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 11.5A continuous drain current. Offers a maximum drain-source on-resistance of 700mΩ at a gate-source voltage of 10V. Designed for surface mounting in a D2PAK package, this single-element MOSFET boasts a maximum power dissipation of 165W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a turn-on delay time of 21ns and a fall time of 35ns.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power165W
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Technical Specifications
Onsemi FDB12N50FTM-WS technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 11.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 590mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 700MR |
| Element Configuration | Single |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.395nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 165W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 165W |
| Radiation Hardening | No |
| Rds On Max | 700mR |
| Series | UniFET™ |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 21ns |
| Weight | 1.31247g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDB12N50FTM-WS Datasheet
Download the complete datasheet for Onsemi FDB12N50FTM-WS to view detailed technical specifications.
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