N-Channel Power MOSFET, UniFET™ series, featuring a 500V drain-source breakdown voltage and 11.5A continuous drain current. This surface-mount component offers a maximum drain-source on-resistance of 650mΩ and a maximum power dissipation of 165W. Designed for efficient switching, it exhibits typical turn-on delay of 25ns and fall time of 35ns. Packaged in a D2PAK for tape and reel distribution, this RoHS compliant MOSFET operates from -55°C to 150°C.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FDB12N50TM technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 11.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 650MR |
| Element Configuration | Single |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 1.315nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 165W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 650mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 25ns |
| Weight | 1.31247g |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDB12N50TM Datasheet
Download the complete datasheet for Onsemi FDB12N50TM to view detailed technical specifications.
No datasheet is available for this part.
Product Images
