N-Channel MOSFET featuring 75V drain-source breakdown voltage and 58A continuous drain current. Offers low 16mΩ Rds(on) for efficient power handling. Designed for surface mounting in a TO-263-3 package, this single element transistor operates from -55°C to 175°C with a maximum power dissipation of 135W. Includes fast switching characteristics with turn-on delay of 8ns and fall time of 30ns.
Onsemi FDB16AN08A0 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 58A |
| Current Rating | 58A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 13mR |
| Drain to Source Voltage (Vdss) | 75V |
| Element Configuration | Single |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.857nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 135W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 135W |
| Radiation Hardening | No |
| Rds On Max | 16mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 75V |
| Weight | 1.31247g |
| RoHS | Compliant |
No datasheet is available for this part.
