
N-Channel Power MOSFET, UniFET™ series, featuring a 250V drain-source breakdown voltage and 33A continuous drain current. This surface-mount component offers a low 94mΩ drain-source on-resistance and a maximum power dissipation of 235W. Packaged in a D2PAK, it operates from -55°C to 150°C and includes fast switching characteristics with turn-on delay of 35ns and fall time of 120ns. RoHS compliant and lead-free.
Onsemi FDB33N25TM technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 94mR |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 94MR |
| Element Configuration | Single |
| Fall Time | 120ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 2.135nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 235W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 235W |
| Radiation Hardening | No |
| Rds On Max | 94mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 35ns |
| Weight | 1.31247g |
| Width | 11.33mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDB33N25TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
