N-Channel PowerTrench® MOSFET featuring 100V drain-source breakdown voltage and 80A continuous drain current. Offers a low 9mΩ maximum drain-source on-resistance at a nominal 4V gate-source voltage. Designed for surface mount applications in a TO-263AB package, this single-element MOSFET boasts a maximum power dissipation of 310W and operates across a wide temperature range of -55°C to 175°C. RoHS compliant and lead-free, it is supplied on an 800-piece tape and reel.
PackageTO-263AB
Current Rating44A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDB3632 technical specifications.
General
Package/Case
TO-263AB
Continuous Drain Current (ID)
80A
Current Rating
44A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
7.5mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
9MR
Dual Supply Voltage
100V
Element Configuration
Single
Fall Time
46ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
6nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
310W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
310W
Radiation Hardening
No
Rds On Max
9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
4V
Turn-Off Delay Time
96ns
Turn-On Delay Time
30ns
DC Rated Voltage
100V
Weight
1.31247g
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDB3632 Datasheet
Download the complete datasheet for Onsemi FDB3632 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.