
N-channel MOSFET with 100V drain-source breakdown voltage and 44A continuous drain current. Features low on-resistance of 24mR at 10Vgs, 11ns turn-on delay, and 26ns turn-off delay. Operates from -55°C to 175°C with a maximum power dissipation of 120W. Packaged in a TO-263AB (D2PAK) surface-mount case, this RoHS-compliant component is supplied on tape and reel.
Onsemi FDB3672 technical specifications.
| Package/Case | TO-263AB |
| Continuous Drain Current (ID) | 44A |
| Current | 44A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 44ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.71nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 120W |
| Radiation Hardening | No |
| Rds On Max | 28mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 11ns |
| Voltage | 100V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDB3672 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.