
N-Channel Power MOSFET, UniFET™ series, featuring a 250V drain-source breakdown voltage and a continuous drain current of 44A. This surface-mount component offers a low drain-source on-resistance of 69mΩ at a nominal gate-source voltage of 5V. Designed for high power applications, it boasts a maximum power dissipation of 307W and operates within a temperature range of -55°C to 150°C. The D2PAK package is supplied on an 800-piece tape and reel, with RoHS compliance.
Onsemi FDB44N25TM technical specifications.
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