N-Channel Power MOSFET featuring a 200V Drain-to-Source Breakdown Voltage and a 52A Continuous Drain Current. This UniFET™ series component offers a low 49mΩ maximum Drain-Source On-Resistance at a nominal 5V Gate-to-Source voltage. Designed for surface mounting in a D2PAK package, it boasts a maximum power dissipation of 357W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 53ns turn-on delay and a 48ns turn-off delay, with an input capacitance of 2.9nF. This RoHS compliant component is supplied on an 800-piece tape and reel.
PackageD2PAK
Current Rating52A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FDB52N20TM technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 52A |
| Current Rating | 52A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 49mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 49mR |
| Element Configuration | Single |
| Fall Time | 150ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.572mm |
| Input Capacitance | 2.9nF |
| Lead Free | Lead Free |
| Length | 9.98mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 357W |
| Mount | Surface Mount |
| Nominal Vgs | 5V |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Rds On Max | 49mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 53ns |
| DC Rated Voltage | 200V |
| Weight | 1.31247g |
| Width | 10.16mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDB52N20TM Datasheet
Download the complete datasheet for Onsemi FDB52N20TM to view detailed technical specifications.
No datasheet is available for this part.
Product Images
