
N-CHANNEL Power Field-Effect Transistor, R-type package, 30V Drain to Source Breakdown Voltage, 40A Continuous Drain Current, 18mΩ Drain to Source Resistance. Features 1.16nF Input Capacitance, 8ns Fall Time, and 23ns Turn-Off Delay Time. Operates from -65°C to 175°C with 60W Max Power Dissipation. Surface mount, tape and reel packaging.
Onsemi FDB6030BL technical specifications.
| Package/Case | R |
| Continuous Drain Current (ID) | 40A |
| Current Rating | 40A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.16nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 60W |
| Mount | Surface Mount |
| Nominal Vgs | 1.6V |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Rds On Max | 18mR |
| Reach SVHC Compliant | No |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 23ns |
| DC Rated Voltage | 30V |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi FDB6030BL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
