N-Channel Logic Level MOSFET, TO-263AB package, 30V Drain to Source Voltage (Vdss). Features 80A Continuous Drain Current (ID) and 6.5mR Drain-source On Resistance-Max (Rds On Max). Operates with a Gate to Source Voltage (Vgs) up to 20V and offers a maximum power dissipation of 68W. This surface mount component has a maximum operating temperature of 175°C and is supplied in an 800-piece tape and reel.
PackageTO-263AB
MountingSurface Mount
PolarityN-CHANNEL
Power68W
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Technical Specifications
Onsemi FDB6670AL technical specifications.
General
Package/Case
TO-263AB
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
6.5mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
6.5MR
Element Configuration
Single
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.44nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Max Power Dissipation
68W
Mount
Surface Mount
Number of Elements
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
68W
Rds On Max
6.5mR
Series
PowerTrench®
Turn-Off Delay Time
42ns
DC Rated Voltage
30V
Weight
1.31247g
Compliance
RoHS
Not Compliant
Datasheet
Onsemi FDB6670AL Datasheet
Download the complete datasheet for Onsemi FDB6670AL to view detailed technical specifications.
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