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ONSEMI

FDB8132_F085

Datasheet
Onsemi

FDB8132_F085

Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R

  1. Semiconductors
  2. Discrete Semiconductors
  1. Semiconductors
  2. Discrete Semiconductors
  3. Transistors
  4. MOSFETs

PackageTO-263AB
MountingSurface Mount
PolarityN-CHANNEL
Power341W
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Technical Specifications

Onsemi FDB8132_F085 technical specifications.

General

Package/Case
TO-263AB
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
1.4mR
Drain to Source Voltage (Vdss)
30V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
14.1nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
341W
Mount
Surface Mount
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
341W
Radiation Hardening
No
Rds On Max
1.6mR
RoHS Compliant
Yes
Series
Automotive, AEC-Q101, PowerTrench®
Turn-Off Delay Time
79ns
Turn-On Delay Time
20ns

Compliance

RoHS
Compliant

Datasheet

Onsemi FDB8132_F085 Datasheet

Download the complete datasheet for Onsemi FDB8132_F085 to view detailed technical specifications.

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