
N-Channel PowerTrench® MOSFET, 30V Drain to Source Breakdown Voltage, 80A Continuous Drain Current, and 1.8mΩ Max Rds On. This single element transistor features a TO-263AB surface mount package, ideal for demanding applications. With a maximum power dissipation of 254W and an operating temperature range of -55°C to 175°C, it offers robust performance. Key electrical characteristics include 11.825nF input capacitance, 27ns fall time, and 60ns turn-off delay time. Supplied in an 800-piece tape and reel, this RoHS compliant component is designed for automotive and AEC-Q101 qualified environments.
Onsemi FDB8160-F085 technical specifications.
| Package/Case | TO-263AB |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 1.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 11.825nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 254W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 254W |
| Radiation Hardening | No |
| Rds On Max | 1.8mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, PowerTrench® |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 17.2ns |
| Weight | 1.31247g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDB8160-F085 to view detailed technical specifications.
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