
The FDB8444TS is a surface mount N-CHANNEL power MOSFET with a maximum operating temperature of -55°C to 175°C. It has a continuous drain current of 20A and a drain to source breakdown voltage of 40V. The device features a drain to source resistance of 3.8mR and a maximum power dissipation of 181W. It is packaged in a TO-263-5 case and is RoHS compliant.
Onsemi FDB8444TS technical specifications.
| Package/Case | TO-263-5 |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 3.8mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 17.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 8.41nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 181W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 181W |
| Radiation Hardening | No |
| Rds On Max | 5mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 14.6ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDB8444TS to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
