The FDB8878 is a high-power N-CHANNEL MOSFET with a breakdown voltage of 30V and a continuous drain current of 48A. It features a low on-resistance of 14mR and a fast switching time with a fall time of 35.3ns. The device is packaged in a TO-263 case and is suitable for surface mount applications. It operates over a temperature range of -55°C to 175°C and is compliant with RoHS regulations.
PackageTO-263
MountingSurface Mount
PolarityN-CHANNEL
Power47.3W
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Technical Specifications
Onsemi FDB8878 technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 48A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 35.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.235nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 47.3W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 47.3W |
| Rds On Max | 14mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 14.8ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDB8878 Datasheet
Download the complete datasheet for Onsemi FDB8878 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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