N-channel enhancement mode power MOSFET, 40V drain-source voltage, 110A continuous drain current. Features low 1.2mΩ drain-source on-resistance at 10V gate-source voltage. Housed in a surface-mount D2PAK (TO-263AB) package with gull-wing leads, offering 3 pins and a tab for enhanced thermal performance. Operates across a wide temperature range of -55°C to 175°C, with a maximum power dissipation of 333W.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Onsemi FDB9403-F085 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-263
Package/Case
D2PAK
Package Description
Double Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.67(Max)
Package Width (mm)
9.65(Max)
Package Height (mm)
4.83(Max)
Seated Plane Height (mm)
5.08(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-263AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
40V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
110A
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
1.2@10VmOhm
Typical Gate Charge @ Vgs
164@10VnC
Typical Gate Charge @ 10V
164nC
Typical Input Capacitance @ Vds
12700@25VpF
Maximum Power Dissipation
333000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
5V1P1
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
PPAP
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi FDB9403-F085 Datasheet
Download the complete datasheet for Onsemi FDB9403-F085 to view detailed technical specifications.
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