ONSEMI

FDC3601N

Onsemi

FDC3601N

Name: FDC3601N Onsemi
Brand: Onsemi
SKU: FDC3601N

Dual N-Ch JFET 100V 1A 500mR SOT-23-6

Dual N-Channel MOSFET featuring 100V Drain to Source Breakdown Voltage and 500mΩ Drain-Source On Resistance. This surface mount component offers a 1A continuous drain current and a 960mW maximum power dissipation. Designed with a SOT-23-6 package, it operates across a temperature range of -55°C to 150°C. Key electrical characteristics include 153pF input capacitance and a 2.6V threshold voltage.

PackageSOT-23-6

Current Rating1A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Onsemi FDC3601N technical specifications.

General

Package/Case	SOT-23-6
Continuous Drain Current (ID)	1A
Current Rating	1A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	500mR
Drain to Source Voltage (Vdss)	100V
Drain-source On Resistance-Max	500MR
Element Configuration	Dual
Fall Time	4ns
FET Type	2 N-Channel
Gate to Source Voltage (Vgs)	20V
Height	1mm
Input Capacitance	153pF
Lead Free	Lead Free
Length	3mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	960mW
Mount	Surface Mount
Number of Elements	2
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	960mW
Radiation Hardening	No
Rds On Max	500mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	PowerTrench®
Threshold Voltage	2.6V
Turn-Off Delay Time	11ns
Turn-On Delay Time	8ns
DC Rated Voltage	100V
Weight	0.036g
Width	1.7mm