N-Channel PowerTrench® MOSFET with 100V drain-source breakdown voltage and 2.6A continuous drain current. Features 125mΩ maximum drain-source resistance at nominal Vgs of 2.3V. This single-element transistor offers a fast 3.5ns fall time, 6ns turn-on delay, and 23ns turn-off delay. Packaged in a compact SOT-23-6 surface-mount case, it operates from -55°C to 150°C with a maximum power dissipation of 1.6W. RoHS compliant and lead-free.
PackageSOT-23-6
Current Rating2.6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDC3612 technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
2.6A
Current Rating
2.6A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
125mR
Drain to Source Voltage (Vdss)
100V
Dual Supply Voltage
100V
Element Configuration
Single
Fall Time
3.5ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
660pF
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Nominal Vgs
2.3V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.6W
Radiation Hardening
No
Rds On Max
125mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
2.3V
Turn-Off Delay Time
23ns
Turn-On Delay Time
6ns
DC Rated Voltage
100V
Weight
0.036g
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDC3612 Datasheet
Download the complete datasheet for Onsemi FDC3612 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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