N-Channel PowerTrench® MOSFET, 60V Drain to Source Breakdown Voltage, 4.3A Continuous Drain Current, and 55mΩ Max Drain-Source On Resistance. This single-element transistor features a 2.2V Threshold Voltage, 650pF Input Capacitance, and 8ns Fall Time. Packaged in a SOT-23-6 surface mount configuration, it operates from -55°C to 150°C with a 1.6W Max Power Dissipation. RoHS compliant and lead-free.
PackageSOT-23-6
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Onsemi FDC5612 technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
4.3A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
55mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
55mR
Dual Supply Voltage
60V
Element Configuration
Single
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
650pF
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.6W
Radiation Hardening
No
Rds On Max
55mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
2.2V
Turn-Off Delay Time
19ns
Turn-On Delay Time
11ns
DC Rated Voltage
60V
Weight
0.036g
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDC5612 Datasheet
Download the complete datasheet for Onsemi FDC5612 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.