P-Channel PowerTrench® MOSFET, logic-level, featuring a 60V drain-source breakdown voltage and a continuous drain current of 3A. This surface-mount component offers a low drain-source on-resistance of 105mΩ at a nominal gate-source voltage of -1.6V. It operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.6W. The SOT-23-6 package is supplied on a 3000-piece tape and reel.
PackageSOT-23-6
Voltage60V
Current2A
Current Rating-3A
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Technical Specifications
Onsemi FDC5614P technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
3A
Current
2A
Current Rating
-3A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
105mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
105MR
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
759pF
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Nominal Vgs
-1.6V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.6W
Radiation Hardening
No
Rds On Max
105mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
-1.6V
Turn-Off Delay Time
19ns
Turn-On Delay Time
7ns
Voltage
60V
DC Rated Voltage
-60V
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDC5614P Datasheet
Download the complete datasheet for Onsemi FDC5614P to view detailed technical specifications.
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