
Dual N-Channel JFET, surface mount, SOT-23-6 package. Features 25V drain-source breakdown voltage, 220mA continuous drain current, and 4 Ohm drain-source on-resistance. Operates with a gate-source voltage of 8V and offers fast switching with 4.5ns fall time. Rated for 900mW power dissipation and a temperature range of -55°C to 150°C.
Sign in to ask questions about the Onsemi FDC6301N datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi FDC6301N technical specifications.
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 220mA |
| Current Rating | 220mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 3.8R |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 4R |
| Dual Supply Voltage | 25V |
| Element Configuration | Dual |
| Fall Time | 4.5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 9.5pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Nominal Vgs | 850mV |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 900mW |
| Radiation Hardening | No |
| Rds On Max | 4R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 850mV |
| Turn-Off Delay Time | 4ns |
| Turn-On Delay Time | 5ns |
| DC Rated Voltage | 25V |
| Weight | 0.036g |
| Width | 1.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDC6301N to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
