N and P-Channel MOSFETs designed for power applications. Features 30V drain-to-source breakdown voltage and 2.5A continuous drain current. Offers low on-resistance of 95mR at a nominal gate-source voltage of 1.8V. Packaged in a compact SOT-23-6 surface-mount case, these devices boast fast switching speeds with turn-on delay of 4.5ns and fall time of 13ns. Maximum power dissipation is 960mW, operating across a temperature range of -55°C to 150°C.
PackageSOT-23-6
Current Rating2.5A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDC6333C technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
2.5A
Current Rating
2.5A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
95mR
Drain to Source Voltage (Vdss)
30V
Fall Time
13ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
25V
Height
1mm
Input Capacitance
282pF
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
960mW
Mount
Surface Mount
Nominal Vgs
1.8V
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
960mW
Radiation Hardening
No
Rds On Max
95mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
1.8V
Turn-Off Delay Time
11ns
Turn-On Delay Time
4.5ns
Weight
0.036g
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDC6333C Datasheet
Download the complete datasheet for Onsemi FDC6333C to view detailed technical specifications.
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