N and P-Channel MOSFETs designed for power applications. Features 30V drain-to-source breakdown voltage and 2.5A continuous drain current. Offers low on-resistance of 95mR at a nominal gate-source voltage of 1.8V. Packaged in a compact SOT-23-6 surface-mount case, these devices boast fast switching speeds with turn-on delay of 4.5ns and fall time of 13ns. Maximum power dissipation is 960mW, operating across a temperature range of -55°C to 150°C.
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Onsemi FDC6333C technical specifications.
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 2.5A |
| Current Rating | 2.5A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 95mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 13ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1mm |
| Input Capacitance | 282pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960mW |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 960mW |
| Radiation Hardening | No |
| Rds On Max | 95mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 4.5ns |
| Weight | 0.036g |
| Width | 1.7mm |
| RoHS | Compliant |
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