P-Channel PowerTrench® MOSFET, surface mount SOT-23 package. Features -20V Drain to Source Breakdown Voltage, -4A continuous drain current, and 65mΩ maximum drain-source on-resistance. Operates with a gate-source voltage up to 8V and a threshold voltage of -600mV. Includes 6ns turn-on delay and 7ns fall time, with 925pF input capacitance. Rated for 1.6W maximum power dissipation and a temperature range of -55°C to 150°C.
PackageSOT-23
Current Rating-4A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDC642P technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
4A
Current Rating
-4A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
65mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
65mR
Element Configuration
Single
Fall Time
7ns
Gate to Source Voltage (Vgs)
8V
Height
1mm
Input Capacitance
925pF
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.6W
Rds On Max
65mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
-600mV
Turn-Off Delay Time
120ns
Turn-On Delay Time
6ns
DC Rated Voltage
-20V
Weight
0.036g
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDC642P Datasheet
Download the complete datasheet for Onsemi FDC642P to view detailed technical specifications.
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