The FDC655AN is an N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 6.3A and a drain to source breakdown voltage of 30V. The device features a drain to source resistance of 23mR and a maximum power dissipation of 1.6W. It is packaged in a surface mount SOT-23-6 package and is lead free and RoHS compliant.
PackageSOT-23-6
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Onsemi FDC655AN technical specifications.
General
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 6.3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 830pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Rds On Max | 27mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDC655AN Datasheet
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