N-Channel MOSFET, logic level, featuring 30V drain-source breakdown voltage and a continuous drain current of 6.3A. Offers a low 25mΩ drain-source on-resistance. This surface-mount component, packaged in SOT-23-6, operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.6W. Includes fast switching characteristics with a 4ns fall time.
PackageSOT-23-6
Current Rating6.3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDC655BN technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
6.3A
Current Rating
6.3A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
25MR
Element Configuration
Single
Fall Time
4ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
570pF
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Nominal Vgs
1.9V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.6W
Rds On Max
25mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
1.9V
Turn-Off Delay Time
15ns
Turn-On Delay Time
6ns
DC Rated Voltage
30V
Weight
0.036g
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDC655BN Datasheet
Download the complete datasheet for Onsemi FDC655BN to view detailed technical specifications.
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