Dual N-Channel PowerTrench® MOSFET, logic level, 30V drain-source breakdown voltage, 2.5A continuous drain current, and 95mΩ maximum drain-source on-resistance. This surface mount component features a SOT-23-6 package, 1.8V nominal gate-source voltage, and a maximum power dissipation of 960mW. Operating temperature range is -55°C to 150°C, with typical turn-on delay of 6ns and turn-off delay of 12ns.
PackageSOT-23-6
Voltage30V
Current24A
Current Rating2.5A
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Technical Specifications
Onsemi FDC6561AN technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
2.5A
Current
24A
Current Rating
2.5A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
95mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
95mR
Dual Supply Voltage
30V
Fall Time
10ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
220pF
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
960mW
Mount
Surface Mount
Nominal Vgs
1.8V
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
900mW
Rds On Max
95mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Turn-Off Delay Time
12ns
Turn-On Delay Time
6ns
Voltage
30V
DC Rated Voltage
30V
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDC6561AN Datasheet
Download the complete datasheet for Onsemi FDC6561AN to view detailed technical specifications.
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