N-Channel Power Trench® MOSFET, 30V Drain to Source Breakdown Voltage, 8A Continuous Drain Current, and 16mΩ Drain to Source Resistance. Features a 1.04nF Input Capacitance, 2ns Fall Time, 6ns Turn-On Delay, and 17ns Turn-Off Delay. Surface mountable in a 3mm x 1.7mm x 1mm SOT-6 package, operating from -55°C to 150°C with 1.6W Max Power Dissipation. Lead-free and RoHS compliant, supplied on a 3000-piece tape and reel.
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Onsemi FDC8878 technical specifications.
| Package/Case | SOT-6 |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 1.04nF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 800mW |
| Radiation Hardening | No |
| Rds On Max | 16mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 6ns |
| Weight | 0.036g |
| Width | 1.7mm |
| RoHS | Compliant |
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