ONSEMI

FDC8878

Datasheet

Onsemi

FDC8878

Name: FDC8878 Onsemi
Brand: Onsemi
SKU: FDC8878

N-Ch MOSFET, 30V, 8A, 16mR, SOT-6, Surface Mount

N-Channel Power Trench® MOSFET, 30V Drain to Source Breakdown Voltage, 8A Continuous Drain Current, and 16mΩ Drain to Source Resistance. Features a 1.04nF Input Capacitance, 2ns Fall Time, 6ns Turn-On Delay, and 17ns Turn-Off Delay. Surface mountable in a 3mm x 1.7mm x 1mm SOT-6 package, operating from -55°C to 150°C with 1.6W Max Power Dissipation. Lead-free and RoHS compliant, supplied on a 3000-piece tape and reel.

PackageSOT-6

MountingSurface Mount

PolarityN-CHANNEL

Power800mW

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Technical Specifications

Onsemi FDC8878 technical specifications.

General

Package/Case	SOT-6
Continuous Drain Current (ID)	8A
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	16mR
Drain to Source Voltage (Vdss)	30V
Element Configuration	Single
Fall Time	2ns
Gate to Source Voltage (Vgs)	20V
Height	1mm
Input Capacitance	1.04nF
Lead Free	Lead Free
Length	3mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.6W
Mount	Surface Mount
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	800mW
Radiation Hardening	No
Rds On Max	16mR
RoHS Compliant	Yes
Series	PowerTrench®
Turn-Off Delay Time	17ns
Turn-On Delay Time	6ns
Weight	0.036g
Width	1.7mm