N-Channel Power MOSFET featuring 75V drain-source breakdown voltage and 50A continuous drain current. Offers a low 16mΩ drain-source on-resistance. Designed for surface mount applications in a TO-252AA package, this single-element transistor operates from -55°C to 175°C with a maximum power dissipation of 135W. Includes 8ns turn-on delay and 32ns turn-off delay.
PackageTO-252AA
Current Rating50A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDD16AN08A0 technical specifications.
General
| Package/Case | TO-252AA |
| Continuous Drain Current (ID) | 50A |
| Current Rating | 50A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 16MR |
| Element Configuration | Single |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 1.874nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 135W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 135W |
| Radiation Hardening | No |
| Rds On Max | 16mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 75V |
| Weight | 0.26037g |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDD16AN08A0 Datasheet
Download the complete datasheet for Onsemi FDD16AN08A0 to view detailed technical specifications.
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