N-Channel Trench MOSFET, 75V Vds, 50A Continuous Drain Current, 16mΩ Rds On. Features include 135W Max Power Dissipation, 1.874nF Input Capacitance, 8ns Turn-On Delay, and 32ns Turn-Off Delay. Operates from -55°C to 175°C. Packaged in TO-252AA for surface mounting, supplied on a 2500-piece tape and reel. RoHS compliant.
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Onsemi FDD16AN08A0-F085 technical specifications.
| Package/Case | TO-252AA |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 75V |
| Element Configuration | Single |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.874nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 135W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 135W |
| Radiation Hardening | No |
| Rds On Max | 16mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, UltraFET™ |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.26037g |
| RoHS | Compliant |
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