N-Channel MOSFET, 200V Drain-Source Breakdown Voltage, 3.6A Continuous Drain Current, 130mΩ Drain-Source Resistance. Features a 20V Gate-Source Voltage, 1.3W Max Power Dissipation, and operates from -55°C to 150°C. Surface mount TO-252 package, 2500 units per tape and reel. RoHS compliant with 13ns turn-on and 30ns turn-off delay times.
PackageTO-252
Current Rating3.6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDD2670 technical specifications.
General
Package/Case
TO-252
Continuous Drain Current (ID)
3.6A
Current Rating
3.6A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
130mR
Drain to Source Voltage (Vdss)
200V
Dual Supply Voltage
200V
Element Configuration
Single
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
1.228nF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Surface Mount
Nominal Vgs
4V
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.2W
Radiation Hardening
No
Rds On Max
130mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
4V
Turn-Off Delay Time
30ns
Turn-On Delay Time
13ns
DC Rated Voltage
200V
Weight
0.26037g
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDD2670 Datasheet
Download the complete datasheet for Onsemi FDD2670 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.