P-Channel MOSFET, TO-252 package, -40V Drain to Source Breakdown Voltage, 12.3mΩ Drain-source On Resistance-Max. Features 10.8A Continuous Drain Current, 69W Max Power Dissipation, and 150°C Max Operating Temperature. Surface mount design with 2500 units per tape and reel. PowerTrench® series technology with 15ns fall time and 38ns turn-off delay.
PackageTO-252
MountingSurface Mount
PolarityP-CHANNEL
Power2.4W
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Technical Specifications
Onsemi FDD4141 technical specifications.
General
Package/Case
TO-252
Continuous Drain Current (ID)
10.8A
Drain to Source Breakdown Voltage
-40V
Drain to Source Resistance
12.3R
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
12.3MR
Element Configuration
Single
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
2.775nF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
69W
Mount
Surface Mount
Nominal Vgs
-1.8V
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.4W
Radiation Hardening
No
Rds On Max
12.3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
-1.8V
Turn-Off Delay Time
38ns
Turn-On Delay Time
10ns
Weight
0.26037g
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDD4141 Datasheet
Download the complete datasheet for Onsemi FDD4141 to view detailed technical specifications.
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