
P-Channel MOSFET, -40V Drain-Source Breakdown Voltage, -14A Current Rating, and 44mΩ Drain-Source On Resistance. This single-element, surface-mount transistor features a TO-252 package, 6.7A continuous drain current, and a maximum power dissipation of 42W. With a nominal gate-source voltage of -1.6V, it offers fast switching speeds with turn-on delay of 6ns and fall time of 7ns. Operating from -55°C to 150°C, this RoHS compliant component is supplied on a 2500-piece tape and reel.
Onsemi FDD4243 technical specifications.
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