
Surface mount P-channel MOSFET featuring a 60V drain-source breakdown voltage and 15A continuous drain current. Offers a low 100mΩ maximum drain-source on-resistance at a nominal gate-source voltage of -1.6V. Designed for efficient power switching with a maximum power dissipation of 42W and operating temperature range of -55°C to 175°C. Packaged in a TO-252 case on a 2500-piece tape and reel.
Onsemi FDD5614P technical specifications.
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 15A |
| Current | 15A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 76mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 100MR |
| Dual Supply Voltage | -60V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 759pF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Nominal Vgs | -1.6V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | -1.6V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 7ns |
| Voltage | 60V |
| DC Rated Voltage | -60V |
| Width | 6.6mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDD5614P to view detailed technical specifications.
No datasheet is available for this part.
