Surface mount P-channel MOSFET featuring a 60V drain-source breakdown voltage and 15A continuous drain current. Offers a low 100mΩ maximum drain-source on-resistance at a nominal gate-source voltage of -1.6V. Designed for efficient power switching with a maximum power dissipation of 42W and operating temperature range of -55°C to 175°C. Packaged in a TO-252 case on a 2500-piece tape and reel.
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| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 15A |
| Current | 15A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 76mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 100MR |
| Dual Supply Voltage | -60V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 759pF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Nominal Vgs | -1.6V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | -1.6V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 7ns |
| Voltage | 60V |
| DC Rated Voltage | -60V |
| Width | 6.6mm |
| RoHS | Compliant |
These are design resources that include the Onsemi FDD5614P
Immediate product discontinuance notice from onsemi for various MOSFETs and discrete components produced at the Tower fab, effective December 24, 2021.
Product discontinuance notice from onsemi for various MOSFETs and transistors produced at the Tower Jazz fab, providing end-of-life dates and potential replacement parts.
