The FDD5N50UTF_WS is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 3A and a drain to source breakdown voltage of 500V. The device is packaged in a TO-252-3 package and is RoHS compliant. It has a maximum power dissipation of 40W and a gate to source voltage of 30V.
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Onsemi FDD5N50UTF_WS technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 650pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 2R |
| RoHS Compliant | Yes |
| Series | FRFET™ |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 14ns |
| RoHS | Compliant |
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