N-Channel Power MOSFET, UniFET™ series, featuring 500V drain-source breakdown voltage and 5.5A continuous drain current. This surface-mount device offers a maximum drain-source on-resistance of 1.15Ω. Designed for efficient switching, it exhibits a turn-on delay time of 17ns and a fall time of 20.5ns. Packaged in a DPAK for automated assembly, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 89W.
Onsemi FDD6N50FTM technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.15R |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 1.15R |
| Element Configuration | Single |
| Fall Time | 20.5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.39mm |
| Input Capacitance | 960pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Radiation Hardening | No |
| Rds On Max | 1.15R |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 33.4ns |
| Turn-On Delay Time | 17ns |
| Weight | 0.26037g |
| Width | 6.22mm |
| RoHS | Compliant |
No datasheet is available for this part.
