N-Channel Power MOSFET featuring 100V drain-source breakdown voltage and 15.7A continuous drain current. Offers a low 75mΩ maximum drain-source resistance. Designed for surface mounting in a DPAK package, this component operates from -55°C to 175°C with a maximum power dissipation of 50W. Key switching characteristics include an 8ns fall time, 17ns turn-on delay, and 27ns turn-off delay.
Onsemi FDD850N10L technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 15.7A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 64mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 1.465nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Rds On Max | 75mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 17ns |
| Weight | 0.26037g |
| Width | 6.22mm |
| RoHS | Compliant |
No datasheet is available for this part.
