
N-channel MOSFET, 20V Drain-Source Breakdown Voltage, 35A Continuous Drain Current, and 4mΩ Drain to Source Resistance. Features a 5.5mΩ Max Drain-Source On Resistance and 77W Max Power Dissipation. Operates across a -55°C to 175°C temperature range. Surface mountable in a TO-252 package, this RoHS compliant component is ideal for demanding applications.
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Onsemi FDD8586 technical specifications.
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 35A |
| Current Rating | 35A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 4mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 5.5MR |
| Dual Supply Voltage | 20V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.48nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 77W |
| Mount | Surface Mount |
| Nominal Vgs | 1.6V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 77W |
| Rds On Max | 5.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | 1.6V |
| Turn-Off Delay Time | 47ns |
| DC Rated Voltage | 20V |
| RoHS | Compliant |
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