P-Channel MOSFET with integrated Schottky diode, offering -20V drain-source breakdown voltage and 3.5A continuous drain current. Features a low 140mΩ drain-source on-resistance and 2W maximum power dissipation. Designed for surface mount applications with a 3mm x 3mm package, operating from -55°C to 150°C. Includes fast switching characteristics with 8ns turn-on and 11ns turn-off delay times. Packaged in a 3000-piece tape and reel.
Onsemi FDFM2P110 technical specifications.
| Collector Emitter Breakdown Voltage | 20V |
| Continuous Drain Current (ID) | 3.5A |
| Current Rating | -3.5A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 140MR |
| Element Configuration | Single |
| Fall Time | 3.2ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.75mm |
| Input Capacitance | 280pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 140mR |
| Resistance | 140MR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | -20V |
| Weight | 0.009g |
| Width | 3mm |
| RoHS | Compliant |
No datasheet is available for this part.
