P-channel MOSFET transistor featuring a 20V drain-source breakdown voltage and 3A continuous drain current. Offers a maximum drain-source on-resistance of 120mΩ at a gate-source voltage of 8V. This surface mount component boasts fast switching speeds with turn-on delay of 9ns and fall time of 11ns. Operating across a wide temperature range from -55°C to 150°C, it has a maximum power dissipation of 1.4W and is RoHS compliant.
MountingSurface Mount
PolarityP-CHANNEL
Power1.4W
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Technical Specifications
Onsemi FDFMA2P857 technical specifications.
General
Continuous Drain Current (ID)
3A
Drain to Source Breakdown Voltage
-20V
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
120MR
Fall Time
11ns
Gate to Source Voltage (Vgs)
8V
Height
0.75mm
Input Capacitance
435pF
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.4W
Rds On Max
120mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
-700mV
Turn-Off Delay Time
15ns
Turn-On Delay Time
9ns
Width
2mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDFMA2P857 Datasheet
Download the complete datasheet for Onsemi FDFMA2P857 to view detailed technical specifications.
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