P-channel MOSFET transistor featuring a 20V drain-source breakdown voltage and 3A continuous drain current. Offers a maximum drain-source on-resistance of 120mΩ at a gate-source voltage of 8V. This surface mount component boasts fast switching speeds with turn-on delay of 9ns and fall time of 11ns. Operating across a wide temperature range from -55°C to 150°C, it has a maximum power dissipation of 1.4W and is RoHS compliant.
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Onsemi FDFMA2P857 technical specifications.
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 120MR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 435pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.4W |
| Rds On Max | 120mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | -700mV |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 9ns |
| Width | 2mm |
| RoHS | Compliant |
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