P-channel enhancement mode power MOSFET in a 6-pin MicroFET surface mount package. Features a maximum drain-source voltage of 20V and a continuous drain current of 2.6A. Offers a low maximum drain-source on-resistance of 142 mOhm at 4.5V gate-source voltage. Designed with TMOS process technology, this single-element transistor boasts a maximum power dissipation of 1400mW and operates across a temperature range of -55°C to 150°C.
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Onsemi FDFME2P823ZT technical specifications.
| Package Family Name | MicroFET |
| Package/Case | MicroFET |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 1.6 |
| Package Width (mm) | 1.6 |
| Package Height (mm) | 0.5(Max) |
| Seated Plane Height (mm) | 0.55(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±8V |
| Maximum Continuous Drain Current | 2.6A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 305@10VpF |
| Maximum Power Dissipation | 1400mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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