P-channel MOSFET, 20V drain-source voltage, 3.3A continuous drain current, 125mΩ maximum drain-source on-resistance. Features 270pF input capacitance, 7ns fall time, and 17ns turn-off delay. Surface mountable in an 8-SOIC package, operating from -55°C to 150°C. RoHS compliant with 2W power dissipation.
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Onsemi FDFS2P102 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.3A |
| Current Rating | -3.3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 270pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 125mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1.4V |
| Turn-Off Delay Time | 17ns |
| DC Rated Voltage | -20V |
| RoHS | Compliant |
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