P-channel MOSFET, 20V drain-source voltage, 3.3A continuous drain current, 125mΩ maximum drain-source on-resistance. Features 270pF input capacitance, 7ns fall time, and 17ns turn-off delay. Surface mountable in an 8-SOIC package, operating from -55°C to 150°C. RoHS compliant with 2W power dissipation.
PackageSOIC
Current Rating-3.3A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDFS2P102 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3.3A
Current Rating
-3.3A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
125mR
Drain to Source Voltage (Vdss)
20V
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
270pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2W
Rds On Max
125mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
-1.4V
Turn-Off Delay Time
17ns
DC Rated Voltage
-20V
Compliance
RoHS
Compliant
Datasheet
Onsemi FDFS2P102 Datasheet
Download the complete datasheet for Onsemi FDFS2P102 to view detailed technical specifications.
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