P-channel MOSFET, 20V drain-source breakdown voltage, 3.3A continuous drain current, and 125mΩ Rds On at 10V Vgs. Features a SOIC package for surface mounting, with a maximum power dissipation of 900mW. Operates from -55°C to 150°C, with a nominal Vgs of -1.8V. RoHS compliant and lead-free.
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Onsemi FDFS2P102A technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.3A |
| Current Rating | -3.3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | -20V |
| Fall Time | 2ns |
| Forward Current | 2mA |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 182pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Nominal Vgs | -1.8V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 125mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 11ns |
| DC Rated Voltage | -20V |
| RoHS | Compliant |
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