P-channel MOSFET, 20V drain-source breakdown voltage, 3.3A continuous drain current, and 125mΩ Rds On at 10V Vgs. Features a SOIC package for surface mounting, with a maximum power dissipation of 900mW. Operates from -55°C to 150°C, with a nominal Vgs of -1.8V. RoHS compliant and lead-free.
PackageSOIC
Current Rating-3.3A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDFS2P102A technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3.3A
Current Rating
-3.3A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
125mR
Drain to Source Voltage (Vdss)
20V
Dual Supply Voltage
-20V
Fall Time
2ns
Forward Current
2mA
Gate to Source Voltage (Vgs)
20V
Input Capacitance
182pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Mount
Surface Mount
Nominal Vgs
-1.8V
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2W
Rds On Max
125mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Turn-Off Delay Time
11ns
DC Rated Voltage
-20V
Compliance
RoHS
Compliant
Datasheet
Onsemi FDFS2P102A Datasheet
Download the complete datasheet for Onsemi FDFS2P102A to view detailed technical specifications.
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