P-channel MOSFET with a 30V drain-to-source breakdown voltage and 5.3A continuous drain current. Features a low 59mΩ Rds On, 9ns fall time, and 14ns turn-off delay. Operates from -55°C to 150°C with a maximum power dissipation of 900mW. Surface mountable in an 8-SOIC package, this RoHS compliant component offers a 2W power dissipation.
PackageSOIC
Current Rating-5.3A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDFS2P103 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
5.3A
Current Rating
-5.3A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
59mR
Drain to Source Voltage (Vdss)
30V
Fall Time
9ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
528pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2W
Rds On Max
59mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
-1.7V
Turn-Off Delay Time
14ns
DC Rated Voltage
-30V
Compliance
RoHS
Compliant
Datasheet
Onsemi FDFS2P103 Datasheet
Download the complete datasheet for Onsemi FDFS2P103 to view detailed technical specifications.
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