P-Channel MOSFET for surface mount applications, featuring a 30V drain-source breakdown voltage and 5.3A continuous drain current. This component offers a low 59mΩ drain-source resistance (Rds On Max) and operates within a temperature range of -55°C to 150°C. Designed for efficient switching, it exhibits a typical fall time of 10ns and turn-off delay of 15ns, with an input capacitance of 535pF. The device is RoHS compliant and packaged in an 8-SOIC case on tape and reel.
PackageSOIC
Current Rating-5.3A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDFS2P103A technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
5.3A
Current Rating
-5.3A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
59mR
Drain to Source Voltage (Vdss)
30V
Fall Time
10ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
535pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2W
Rds On Max
59mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
-1.8V
Turn-Off Delay Time
15ns
DC Rated Voltage
-30V
Compliance
RoHS
Compliant
Datasheet
Onsemi FDFS2P103A Datasheet
Download the complete datasheet for Onsemi FDFS2P103A to view detailed technical specifications.
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