P-Channel MOSFET for surface mount applications, featuring a 30V drain-source breakdown voltage and 5.3A continuous drain current. This component offers a low 59mΩ drain-source resistance (Rds On Max) and operates within a temperature range of -55°C to 150°C. Designed for efficient switching, it exhibits a typical fall time of 10ns and turn-off delay of 15ns, with an input capacitance of 535pF. The device is RoHS compliant and packaged in an 8-SOIC case on tape and reel.
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Onsemi FDFS2P103A technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.3A |
| Current Rating | -5.3A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 59mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 535pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 59mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | -1.8V |
| Turn-Off Delay Time | 15ns |
| DC Rated Voltage | -30V |
| RoHS | Compliant |
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