The FDFS2P103A_Q is a P-CHANNEL MOSFET with a breakdown voltage of -30V and a continuous drain current of -5.3A. It has a drain to source resistance of 59mR and a power dissipation of 2W. The device is packaged in a SO package and is available in tape and reel packaging. The FDFS2P103A_Q operates over a temperature range of -55°C to 150°C.
PackageSO
PolarityP-CHANNEL
Power2W
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Technical Specifications
Onsemi FDFS2P103A_Q technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | -5.3A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 59mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Turn-Off Delay Time | 15ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDFS2P103A_Q Datasheet
Download the complete datasheet for Onsemi FDFS2P103A_Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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