
Integrated P-Channel MOSFET and Schottky Diode, surface mountable in SOIC package. Features -60V drain-source breakdown voltage and 3A continuous drain current. Offers low 110mΩ drain-source resistance. Operates from -55°C to 150°C with a maximum power dissipation of 2W. Includes fast switching characteristics with 8.5ns fall time, 8ns turn-on delay, and 28ns turn-off delay.
Onsemi FDFS2P106A technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3A |
| Current Rating | -3A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 8.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 714pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | -60V |
| Weight | 0.2304g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDFS2P106A to view detailed technical specifications.
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