ONSEMI

FDG327N

Datasheet

N-Ch MOSFET, 20V, 1.5A, 90mR, SC, Surface Mount

Onsemi

FDG327N

Name: FDG327N Onsemi
Brand: Onsemi
SKU: FDG327N

N-Ch MOSFET, 20V, 1.5A, 90mR, SC, Surface Mount

N-Channel PowerTrench® MOSFET, designed for switching applications. Features a 20V drain-source breakdown voltage and a maximum continuous drain current of 1.5A. Offers a low drain-source on-resistance of 90mΩ at a nominal gate-source voltage of 700mV. Operates within a temperature range of -55°C to 150°C and is housed in a compact SC package for surface mounting. Includes fast switching characteristics with turn-on delay time of 6ns and fall time of 6.5ns.

PackageSC

Current Rating1.5A

MountingSurface Mount

PolarityN-CHANNEL

Quick Jump:

Technical Specifications

Onsemi FDG327N technical specifications.

General

Package/Case	SC
Continuous Drain Current (ID)	1.5A
Current Rating	1.5A
Drain to Source Breakdown Voltage	20V
Drain to Source Resistance	90mR
Drain to Source Voltage (Vdss)	20V
Drain-source On Resistance-Max	90MR
Element Configuration	Single
Fall Time	6.5ns
FET Technology	METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs)	8V
Height	1mm
Input Capacitance	423pF
JESD-30 Code	R-PDSO-G6
Lead Free	Lead Free
Length	2mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	420mW
Moisture Sensitivity Level	1
Mount	Surface Mount
Nominal Vgs	700mV
Number of Elements	1
Package Body Material	Plastic
Package Quantity	1
Package Shape	Rectangular
Packaging	Tape and Reel
Peak Reflow Temperature (Cel)	260°C
Polarity	N-CHANNEL
Power Dissipation	420mW
Radiation Hardening	No
Rds On Max	90mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	PowerTrench®
Surface Mount	Yes
Terminal Finish	Tin
Terminal Form	Gull Wing
Terminal Position	DUAL
Threshold Voltage	700mV
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Turn-Off Delay Time	14ns
Turn-On Delay Time	6ns
DC Rated Voltage	20V
Weight	0.028g
Width	1.25mm